Concentration Profile Surfaces and Contour studies of GaP by liquid phase epitaxy
نویسندگان
چکیده
منابع مشابه
Layered Growth of Lattice-Mismatched GaxIn1 xP on GaP Substrates by Liquid Phase Epitaxy
We report layered growth of GaxIn1 xP on GaP substrates using single-step liquid phase epitaxy (LPE) with a Sn-based melt when the lattice mismatch is greater than 0.4 % (x< 0.95). Compositional control was observed by (1) varying the cooling rate and (2) changing the melt-back temperature at the beginning of the growth. Possible growth mechanisms are proposed to explain the principles of both ...
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ژورنال
عنوان ژورنال: Journal of Bangladesh Academy of Sciences
سال: 1970
ISSN: 0378-8121
DOI: 10.3329/jbas.v32i1.2446